ZXTP2013G_15 Datasheet, PDF (2/7 Pages) Diodes Incorporated – 100V PNP MEDIUM POWER LOW SATURATION TRANSISTOR IN SOT223

Absolute Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Peak Pulse Current
Symbol
VCBO
VCEO
VEBO
IC
ICM
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ZXTP2013G
Value
Unit
-140
V
-100
V
-7
V
-5
A
-10
A
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Power Dissipation (Note 5)
Linear Derating Factor
Power Dissipation (Note 6)
Linear Derating Factor
Thermal Resistance, Junction to Ambient (Note 5)
Thermal Resistance, Junction to Ambient (Note 6)
Thermal Resistance Junction to Lead (Note 7)
Thermal Resistance Junction to Case (Note 8)
Operating and Storage Temperature Range
Symbol
PD
PD
RθJA
RθJA
RθJL
RθJC
TJ,TSTG
Value
3.0
24
1.6
12.8
42
78
10.48
13.8
-55 to +150
Unit
W
mW/°C
W
mW/°C
°C/W
°C/W
°C/W
°C/W
°C
ESD Ratings (Note 9)
Characteristic
Symbol
Value
Unit JEDEC Class
Electrostatic Discharge - Human Body Model
ESD HBM
4,000
V
3A
Electrostatic Discharge - Machine Model
ESD MM
400
V
C
Notes:
5. For a device mounted with the collector lead on 52mm x 52mm 2oz copper that is on a single-sided 1.6mm FR4 PCB; device is measured under
still air conditions whilst operating in steady-state.
6. Same as Note 5, except the device is mounted on 25mm x 25mm 1oz copper.
7. Thermal resistance from junction to solder-point (at the end of the collector lead).
8. Thermal resistance from junction to top of the case.
9. Refer to JEDEC specification JESD22-A114 and JESD22-A115.
ZXTP2013G
Datasheet Number: DS33714 Rev. 3 - 2
2 of 7
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May 2015
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