ZXTP2013G_15 Datasheet, PDF (3/7 Pages) Diodes Incorporated – 100V PNP MEDIUM POWER LOW SATURATION TRANSISTOR IN SOT223

Thermal Characteristics and Derating Information
A Product Line of
Diodes Incorporated
ZXTP2013G
10 V
CE(sat)
Limit
1
DC
1s
100m
100ms
10ms
Single Pulse. T =25°C
amb
1ms
10m
52mmX52mm
single sided 2oz Cu
100µs
100m
1
10
100
-V Collector-Emitter Voltage (V)
CE
Safe Operating Area
3.0
2.5
52mmX52mm
2.0
single sided 2oz Cu
1.5
1.0
0.5
25mmX25mm
single sided 1oz Cu
0.0
0 20 40 60 80 100 120 140 160
Temperature (°C)
Derating Curve
40 52mmX52mm
single sided 2oz Cu
30
D=0.5
20
D=0.2
10
Single Pulse
D=0.05
D=0.1
0
100µ 1m 10m 100m 1 10 100 1k
Pulse Width (s)
Transient Thermal Impedance
Single Pulse. T =25°C
amb
100
52mmX52mm
single sided 2oz Cu
10
1
100µ 1m 10m 100m 1
10 100 1k
Pulse Width (s)
Pulse Power Dissipation
ZXTP2013G
Datasheet Number: DS33714 Rev. 3 - 2
3 of 7
www.diodes.com
May 2015
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