ZXTP2012G_16 Datasheet, PDF (4/7 Pages) Diodes Incorporated – 60V PNP MEDIUM POWER LOW SATURATION TRANSISTOR

ZXTP2012G
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Collector-Emitter Breakdown Voltage (Note 9)
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Collector Cutoff Current
Emitter Cutoff Current
Collector-Emitter Saturation Voltage (Note 9)
Base-Emitter Saturation Voltage (Note 9)
Base-Emitter Turn-On Voltage (Note 9)
DC Current Gain (Note 9)
Symbol
BVCBO
BVCER
BVCEO
BVEBO
ICBO
ICER
R≤1kΩ
IEBO
Min
-100
-100
-60
-7
—
—
—
—
—
VCE(SAT)
—
VBE(SAT)
—
VBE(ON)
—
100
hFE
100
45
10
Typ
-120
-120
-80
-8.1
< -1
—
< -1
—
< -1
-15
-55
-90
-195
-1.03
-0.92
250
200
90
25
Transition Frequency
fT
—
120
Output Capacitance (Note 9)
Switching Times
COBO
—
48
tON
—
39
tOFF
—
370
Note:
9. Measured under pulsed conditions. Pulse width ≤ 300µs. Duty cycle ≤ 2%.
Max
—
—
—
—
-20
-0.5
-20
-0.5
-10
-25
-70
-120
-250
-1.15
-1.02
300
—
—
—
—
Unit
V
V
V
V
nA
µA
nA
µA
nA
mV
V
V
—
MHz
pF
ns
Test Condition
IC = -100µA
IC = -1µA, RB ≤ 1kΩ
IC = -10mA
IE = -100µA
VCB = -80V
VCB = -80V, TA = +100°C
VCB = -80V
VCB = -80V, TA = +100°C
VEB = -6V
IC = -0.1A, IB = -10mA
IC = -1A, IB = -100mA
IC = -2A, IB = -200mA
IC = -5A, IB = -500mA
IC = -5A, IB = -500mA
IC = -5A, VCE = -1V
IC = -10mA, VCE = -1V
IC = -2A, VCE = -1V
IC = -5A, VCE = -1V
IC = -10A, VCE = -1V
VCE = -10V, IC = -100mA,
f = 50MHz
VCB = -10V, f = 1MHz
VCC = -10V, IC = -1A,
IB1 = -IB2 = 100mA
ZXTP2012G
Document number: DS33712 Rev. 2 - 2
4 of 7
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December 2015
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