ZXTP2012G_16 Datasheet, PDF (2/7 Pages) Diodes Incorporated – 60V PNP MEDIUM POWER LOW SATURATION TRANSISTOR

ZXTP2012G
Absolute Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Peak Pulse Current
Symbol
VCBO
VCEO
VEBO
IC
ICM
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Power Dissipation
Linear Derating Factor
(Note 5)
PD
(Note 6)
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Lead
Operating and Storage Temperature Range
(Note 5)
(Note 6)
(Note 7)
RθJA
RθJA
RθJL
TJ, TSTG
Value
-100
-60
-7
-5.5
-15
Value
3.0
24
1.6
12.8
42
78
8.8
-55 to +150
Unit
V
V
V
A
A
Unit
W
mW/°C
°C/W
°C
ESD Ratings (Note 8)
Characteristic
Electrostatic Discharge – Human Body Model
Electrostatic Discharge – Machine Model
Symbol
ESD HBM
ESD MM
Value
4,000
400
Unit JEDEC Class
V
3A
V
C
Notes:
5. For a device mounted with the collector lead on 52mm x 52mm 2oz copper that is on a single-sided 1.6mm FR4 PCB; device is measured under still air
conditions whilst operating in steady-state.
6. Same as Note 5, except the device is mounted on 25mm x 25mm 1oz copper.
7. Thermal resistance from junction to solder-point (at the end of the collector lead).
8. Refer to JEDEC specification JESD22-A114 and JESD22-A115.
ZXTP2012G
Document number: DS33712 Rev. 2 - 2
2 of 7
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December 2015
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