ZXTP2012G_16 Datasheet, PDF (3/7 Pages) Diodes Incorporated – 60V PNP MEDIUM POWER LOW SATURATION TRANSISTOR

ZXTP2012G
Thermal Characteristics and Derating Information
V
CE(sat)
10 _Limit
1
DC
1s
100m
100ms
10ms
1ms
Single Pulse. T =25°C
amb
See note (5)
100µs
10m
100m
1
10
100
-V Collector-Emitter Voltage (V)
CE
Safe Operating Area
3.0
2.5
See note (5)
2.0
1.5
1.0
See note (6)
0.5
0.0
0 20 40 60 80 100 120 140 160
Temperature (°C)
Derating Curve
40 _{See note (5)}
30
D=0.5
20
D=0.2
10
Single Pulse
D=0.05
D=0.1
0
100µ 1m 10m 100m 1 10 100 1k
Pulse Width (s)
Transient Thermal Impedance
Single Pulse. T =25°C
amb
100
See note (5)
10
1
100µ 1m 10m 100m 1 10 100 1k
Pulse Width (s)
Pulse Power Dissipation
ZXTP2012G
Document number: DS33712 Rev. 2 - 2
3 of 7
www.diodes.com
December 2015
© Diodes Incorporated