ZXTN649F_15 Datasheet, PDF (4/7 Pages) Diodes Incorporated – 25V NPN LOW SATURATION TRANSISTOR IN SOT23

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ZXTN649F
Electrical Characteristics (@T_A = +25°C, unless otherwise specified.)
Characteristic
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage (Note 8)
Emitter-Base Breakdown Voltage
Symbol
BV_CBO
BV_CEO
BV_EBO
Min Typ
35
110
25
35
7
8.1
Collector Cut-off Current
I_CBO
-
<1
Emitter Cut-off Current
Static Forward Current Transfer Ratio (Note 8)
I_EBO
-
<1
200 320
h_FE
175 280
155 250
50
85
Collector-Emitter Saturation Voltage (Note 8)
Base-Emitter Saturation Voltage (Note 8)
Base-Emitter Saturation Voltage (Note 8)
V_CE(sat)
V_BE(sat)
V_BE(on)
-
70
-
200
-
900
-
780
Notes: 8. Measured under pulsed conditions. Pulse width ≤ 300µs. Duty cycle ≤ 2%
Max
-
-
-
50
0.5
50
500
-
-
-
120
300
1000
850
Unit
V
V
V
nA
µA
nA
-
mV
mV
mV
Test Condition
I_C = 100µA
I_C = 10mA
I_E = 100µA
V_CB = 28V
V_CB = 28V, T_A = +100°C
V_EB = 5.6V
I_C = 100mA, V_CE = 2V
I_C = 1A, V_CE = 2V
I_C = 2A, V_CE = 2V
I_C = 6A, V_CE = 2V
I_C = 1A, I_B = 100mA
I_C = 3A, I_B = 300mA
I_C = 1A, I_B = 100mA
I_C = 1A, V_CE = 2V
ZXTN649F
Document number: DS31900 Rev. 3 - 2
4 of 7
www.diodes.com
January 2013
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