ZXTN649F_15 Datasheet, PDF (2/7 Pages) Diodes Incorporated – 25V NPN LOW SATURATION TRANSISTOR IN SOT23

Maximum Ratings (@T_A = +25°C, unless otherwise specified.)
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Peak Pulse Current
Base Current
Symbol
V_CBO
V_CEO
V_EBO
I_C
I_CM
I_B
A Product Line of
Diodes Incorporated
ZXTN649F
Value
Unit
35
V
25
V
7
V
3
A
6
A
500
mA
Thermal Characteristics (@T_A = +25°C, unless otherwise specified.)
Characteristic
Power Dissipation
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Leads
Operating and Storage Temperature Range
(Note 5)
(Note 5)
(Note 6)
Symbol
P_D
R_θJA
R_θJL
T_J, T_STG
Value
725
172
79
-55 to +150
Unit
mW
°C/W
°C/W
°C
ESD Ratings (Note 7)
Characteristic
Electrostatic Discharge - Human Body Model
Electrostatic Discharge - Machine Model
Symbol
ESD HBM
ESD MM
Value
≥ 8,000
≥ 400
Unit JEDEC Class
V
3B
V
C
Notes:
5. For a device surface mounted on 15mm x 15mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions; the device is
measured when operating in a steady-state condition.
6. Thermal resistance from junction to solder-point (at the end of collector lead).
7. Refer to JEDEC specification JESD22-A114 and JESD22-A115.
ZXTN649F
Document number: DS31900 Rev. 3 - 2
2 of 7
www.diodes.com
January 2013
© Diodes Incorporated