ZXTN649F_15 Datasheet, PDF (3/7 Pages) Diodes Incorporated – 25V NPN LOW SATURATION TRANSISTOR IN SOT23

Thermal Characteristics and Derating information
A Product Line of
Diodes Incorporated
ZXTN649F
10 V
CE(sat)
Limited
1
DC
1s
100m
100ms
Single Pulse
10ms
1ms
T =25°C
amb
100µs
101m00m
1
10
V Collector-Emitter Voltage (V)
CE
Safe Operating Area
180
T =25°C
160 ^amb
140
120
100 D=0.5
80
60
D=0.2
40
Single Pulse
D=0.05
20
D=0.1
1000µ 1m 10m 100m 1 10 100 1k
Pulse Width (s)
Transient Thermal Impedance
0.8
0.6
0.4
0.2
0.00 _{20 40 60 80 100 120 140 160}
Temperature (°C)
Derating Curve
Single Pulse
100
T =25°C
amb
10
1
100µ 1m 10m 100m 1 10 100 1k
Pulse Width (s)
Pulse Power Dissipation
ZXTN649F
Document number: DS31900 Rev. 3 - 2
3 of 7
www.diodes.com
January 2013
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