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| ZXTN620MA Datasheet, PDF (4/7 Pages) Diodes Incorporated – 80V NPN LOW SATURATION TRANSISTOR | |||
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A Product Line of
Diodes Incorporated
ZXTN620MA
Electrical Characteristics @TA = 25°C unless otherwise specified
Characteristic
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage (Note 6)
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
Collector Emitter Cutoff Current
Static Forward Current Transfer Ratio (Note 6)
Symbol
Min
BVCBO
100
BVCEO
80
BVEBO
7
ICBO
-
IEBO
-
ICES
-
200
300
hFE
110
60
20
-
Collector-Emitter Saturation Voltage (Note 6)
-
-
VCE(sat)
-
-
-
Base-Emitter Turn-On Voltage (Note 6)
Base-Emitter Saturation Voltage (Note 6)
Output Capacitance
VBE(on)
-
VBE(sat)
-
Cobo
-
Transition Frequency
fT
100
Turn-On Time
Turn-Off Time
ton
-
toff
-
Notes: 6. Measured under pulsed conditions. Pulse width ⤠300 µs. Duty cycle ⤠2%.
Typ
180
110
8.2
-
-
-
450
450
170
90
30
10
15
45
145
160
240
0.96
1.09
11.5
160
86
1128
Max
-
-
-
100
100
100
-
900
-
-
-
-
20
60
185
200
340
1.05
1.175
18
-
-
-
Unit
V
V
V
nA
ï nA
nA
-
mV
V
V
pF
MHz
ns
ns
Test Condition
IC = 100 µA
IC = 10 mA
IE = 100 µA
VCB = 80V
VEB = 6V
VCE = 65V
IC = 10mA, VCE = 2V
IC = 200mA, VCE = 2V
IC = 1A, VCE = 2V
IC = 1.5A, VCE = 2V
IC = 3A, VCE = 2V
IC = 5A, VCE = 2V
IC = 0.1A, IB = 10mA
IC = 0.5A, IB = 50mA
IC = 1A, IB = 20mA
IC = 1.5A, IB = 50mA
IC = 3.5A, IB = 300mA
IC = 3.5A, VCE = 2V
IC = 3.5A, IB = 300mA
VCB = 10V. f = 1MHz
VCE = 10V, IC = 50mA,
f = 100MHz
VCC = 10V, IC = 1A
IB1 = IB2 = 25mA
ZXTN620MA
Document Number DS31894 Rev. 3 - 2
4 of 7
www.diodes.com
December 2010
© Diodes Incorporated
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