ZXTN620MA Datasheet, PDF (3/7 Pages) Diodes Incorporated – 80V NPN LOW SATURATION TRANSISTOR

A Product Line of
Diodes Incorporated
ZXTN620MA
Thermal Characteristics
10 V
CE(SAT)
Limited
1
DC
1s
100ms
0.1
10ms
1ms
100us
Single Pulse, T =25°C
amb
0.01
0.1
1
10
100
V Collector-Emitter Voltage (V)
CE
Safe Operating Area
2.0
10 sqcm
1.5
Single
1oz Cu
T =25°C
amb
1.0
0.5
0.0
0
25 50 75 100 125 150
Temperature (°C)
Derating Curve
80
10 sqcm
Single
1oz Cu
60
D=0.5
40
D=0.2
20
Single Pulse
D=0.05
D=0.1
0
100µ 1m 10m 100m 1 10 100 1k
Pulse Width (s)
Transient Thermal Impedance
225
200
175
150
125
100
1oz copper
75
50
25
2oz copper
0
0.1
1
10
100
Board Cu Area (sqcm)
Thermal Resistance v Board Area
3.5
3.0
T =25°C
amb
T =150°C
j max
2.5 _Continuous
2.0
2oz copper
1.5
1oz copper
1.0
0.5
0.0
0.1
1
10
100
Board Cu Area (sqcm)
Power Dissipation v Board Area
ZXTN620MA
Document Number DS31894 Rev. 3 - 2
3 of 7
www.diodes.com
December 2010
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