ZXTN620MA Datasheet, PDF (2/7 Pages) Diodes Incorporated – 80V NPN LOW SATURATION TRANSISTOR

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ZXTN620MA
Maximum Ratings @T_A = 25°C unless otherwise specified
Parameter
Symbol
Limit
Unit
Collector-Base Voltage
V_CBO
100
Collector-Emitter Voltage
V_CEO
80
V
Emitter-Base Voltage
V_EBO
7
Peak Pulse Current
I_CM
5
Continuous Collector Current
(Note 3)
(Note 4)
I_C
3.5
3.8
A
Base Current
I_B
1
Thermal Characteristics @T_A = 25°C unless otherwise specified
Power Dissipation
Linear Derating Factor
Characteristic
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Lead
Operating and Storage Temperature Range
(Note 3)
(Note 4)
(Note 3)
(Note 4)
(Note 5)
Symbol
P_D
R_θJA
R_θJL
T_J, T_STG
Value
1.5
12
2.45
19.6
83
51
16.8
-55 to +150
Unit
W
mW/°C
°C/W
°C
Notes:
3. For a device surface mounted on 31mm x 31mm (10cm²) FR4 PCB with high coverage of single sided 1oz copper, in still air conditions; the device is
measured when operating in a steady-state condition. The entire exposed collector pad is attached to the heatsink.
4. Same as note (3), except the device is measured at t ≤ 5 sec.
5. For a single device, thermal resistance from junction to solder-point (at the end of the drain lead).
ZXTN620MA
Document Number DS31894 Rev. 3 - 2
2 of 7
www.diodes.com
December 2010
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