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| ZXTN2018F Datasheet, PDF (4/6 Pages) Diodes Incorporated – 60V, SOT23, NPN medium power transistor | |||
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ZXTN2018F
Electrical characteristics (at Tamb = 25°C unless otherwise stated)
Parameter
Collector-base breakdown
voltage
Collector-emitter breakdown
voltage
Collector-emitter breakdown
voltage
Emitter-base breakdown
voltage
Collector-emitter cut-off
current
Collector-base cut-off current
Emitter-base cut-off current
Static forward current transfer
ratio
Symbol
V(BR)CBO
V(BR)CEV
V(BR)CEO
V(BR)EBO
ICEV
ICBO
IEBO
HFE
Collector-emitter saturation
voltage
VCE(sat)
Base-emitter saturation voltage
Base-emitter turn-on voltage
Transition frequency
VBE(sat)
VBE(on)
fT
Output capacitance
Turn-on time
Turn-off time
Cobo
t(on)
t(off)
Min.
140
140
60
7
100
100
40
15
Typ.
180
180
80
8
<1
<1
<1
220
200
65
25
15
35
40
85
145
170
0.92
0.85
130
28
33
668
Max.
20
20
10
300
30
45
55
110
170
210
1.00
0.95
Unit Conditions
V IC=100â®A
V IC =1â®A,
-1V < VBE < +0.3V
V IC=10mA (a)
V IE=100â®A
nA
nA
nA
mV
mV
mV
mV
mV
mV
V
V
MHz
pF
ns
ns
VCE=110V,
VBE = -1V
VCB=110V
VEB=6V
IC=10mA, VCE=1V(a)
IC=2A, VCE=1V(a)
IC=5A, VCE=1V(a)
IC=10A, VCE=1V(a)
IC=0.1A, IB=5mA(a)
IC=1A, IB=100mA(a)
IC=1A, IB=50mA(a)
IC=2A, IB=50mA(a)
IC=5A, IB=250mA(a)
IC=6A, IB=300mA(a)
IC=5A, IB=250mA(a)
IC=5A, VCE=1V(a)
Ic=100mA, VCE=10V,
f=50MHz
VCB=10V, f=1MHz
VCC=10V, IC=1A,
IB1=IB2=100mA
NOTES:
(a) Measured under pulsed conditions. Pulse width=300â®S. Duty cycle Õ
2%.
Issue 2 - September 2005
4
© Zetex Semiconductors plc 2005
www.zetex.com
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