ZXTN2018F Datasheet, PDF (2/6 Pages) Diodes Incorporated – 60V, SOT23, NPN medium power transistor

ZXTN2018F
Absolute maximum ratings
Parameter
Collector-base voltage
Collector-emitter voltage
Collector-emitter voltage
Emitter-base voltage
Peak pulse current
Continuous collector current ^(a)
Base current
Power dissipation @ T_A=25^oC ^(a)
Linear derating factor
Power dissipation @ T_A=25^oC ^(b)
Linear derating factor
Power dissipation @ T_A=25^oC ^(c)
Linear derating factor
Operating and storage temperature
Symbol
V_CBO
V_(BR)CEV
V_CEO
V_EBO
I_CM
I_C
I_B
P_D
P_D
P_D
T_j:T_stg
Limit
140
140
60
7
12
5
1
1.0
8.0
1.2
9.6
1.56
12.5
-55 to +150
Unit
V
V
V
V
A
A
A
W
mW/^oC
W
mW/^oC
W
mW/^oC
o_C
Thermal resistance
Parameter
Junction to ambient ^(a)
Junction to ambient ^(b)
Junction to ambient ^(c)
Symbol
R⍜_JA
R⍜_JA
R⍜_JA
Value
125
104
80
Unit
o_C/W
o_C/W
o_C/W
NOTES:
(a) Mounted on 18mm x 18mm X 1.6mm FR4 PCB with a very high coverage of 2 oz weight copper in still air conditions.
(b) Mounted on 30mm x 30mm X 1.6mm FR4 PCB with a very high coverage of 2 oz weight copper in still air conditions.
(c) as (b) above measured at t<5secs.
Issue 2 - September 2005
2
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