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| ZXTN2018F Datasheet, PDF (1/6 Pages) Diodes Incorporated – 60V, SOT23, NPN medium power transistor | |||
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ZXTN2018F
60V, SOT23, NPN medium power transistor
Summary
V(BR)CEV > 140V, V(BR)CEO > 60V
IC(cont) = 5A
RCE(sat) = 25 mâ typical
VCE(sat) < 45 mV @ 1A
PD = 1.2W
Complementary part number : ZXTP2027F
Description
Advanced process capability and package design have been used to
maximize the power handling and performance of this small outline
transistor. The compact size and ratings of this device make it ideally
suited to applications where space is at a premium.
Features
⢠Higher power dissipation SOT23 package
⢠High peak current
⢠Low saturation voltage
⢠140V forward blocking voltage
Applications
⢠MOSFET and IGBT gate driving
⢠Motor drive
⢠Relay, lamp and solenoid drive
Ordering information
Device
ZXTN2018FTA
Reel size
(inches)
7
Tape width
(mm)
8
Quantity per reel
3,000
Device marking
851
Pinout - top view
Issue 2 - September 2005
1
© Zetex Semiconductors plc 2005
www.zetex.com
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