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| ZXTN2011Z_15 Datasheet, PDF (4/7 Pages) Diodes Incorporated – 100V NPN LOW SATURATION MEDIUM POWER TRANSISTOR IN SOT89 | |||
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A Product Line of
Diodes Incorporated
ZXTN2011Z
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Min
Collector-Base Breakdown Voltage
BVCBO
200
Collector-Emitter Breakdown Voltage (Notes 9)
BVCER
200
Collector-Emitter Breakdown Voltage (Notes 9)
BVCEO
100
Emitter-Base Breakdown Voltage
BVEBO
7
Collector Cutoff Current
ICBO
-
-
Collector Cutoff Current
ICER
-
R â¤1kâ¦
-
Emitter Cutoff Current
IEBO
-
100
DC Current Transfer Static Ratio (Notes 9)
100
hFE
30
10
-
-
Collector-Emitter Saturation Voltage (Notes 9)
VCE(sat)
-
-
Base-Emitter Saturation Voltage (Notes 9)
Base-Emitter Turn-on Voltage (Notes 9)
VBE(sat)
-
VBE(on)
-
Transitional Frequency
fT
-
Output Capacitance
Switching Time
Cobo
-
ton
-
toff
Notes: 8. Measured under pulsed conditions. Pulse width ⤠300μs. Duty cycle ⤠2%.
Typ.
235
235
115
8.1
<1
-
<1
-
<1
230
200
60
20
20
45
85
155
1000
900
130
26
41
1010
Max
-
-
-
-
50
500
100
500
10
-
300
-
-
30
60
115
195
1100
1000
-
-
-
Unit
V
V
V
V
nA
nA
nA
nA
nA
-
mV
mV
mV
MHz
pF
ns
Test Condition
IC = 100µA
IC = 1µA, RB ⤠1kâ¦
IC = 1mA
IE = 100µA
VCB = 150V
VCB = 150V, TA = +100°C
VCB = 150V
VCB = 150V, TA = +100°C
VEB = 6V
IC = 10mA, VCE = 2V
IC = 2A, VCE = 2V
IC = 5A, VCE = 2V
IC = 10A, VCE = 2V
IC = 100mA, IB = 5mA
IC = 1A, IB = 100mA
IC = 2A, IB = 100mA
IC = 5A, IB = 500mA
IC = 5A, IB = 500mA
IC = 5A, VCE = 2V
IC = 100mA, VCE = 10V,
f = 50MHz
VCB = 10V, f = 1MHz,
VCC = 10V, IC = 1A,
IB1 = IB2 = 100mA
ZXTN2011Z
Datasheet Number: DS33663 Rev. 3 - 2
4 of 7
www.diodes.com
December 2012
© Diodes Incorporated
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