ZXTN2011Z_15 Datasheet, PDF (3/7 Pages) Diodes Incorporated – 100V NPN LOW SATURATION MEDIUM POWER TRANSISTOR IN SOT89

Thermal Characteristics and Derating Information
A Product Line of
Diodes Incorporated
ZXTN2011Z
V
CE(sat)
10 _Limit
1
DC
1s
100m
100ms
10ms
Single Pulse. T =25°C
amb
1ms
25mmX 25mm FR4 PCB
1oz Cu
100µs
10m
100m
1
10
100
V Collector-Emitter Voltage (V)
CE
Safe Operating Area
2.0
1.5
50mmX 50mm FR4 PCB
1oz Cu
1.0
0.5 ^{25mmX 25mm FR4 PCB}
1oz Cu
0.0
0 20 40 60 80 100 120 140 160
Temperature (°C)
Derating Curve
80
25mmX 25mm FR4 PCB
1oz Cu
60
D=0.5
40
D=0.2
20
Single Pulse
D=0.05
D=0.1
0
100µ 1m 10m 100m 1 10 100 1k
Pulse Width (s)
Transient Thermal Impedance
Single Pulse. T =25°C
amb
100
25mmX 25mm FR4 PCB
1oz Cu
10
1
100µ 1m 10m 100m 1 10 100 1k
Pulse Width (s)
Pulse Power Dissipation
ZXTN2011Z
Datasheet Number: DS33663 Rev. 3 - 2
3 of 7
www.diodes.com
December 2012
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