ZXTN2011Z_15 Datasheet, PDF (2/7 Pages) Diodes Incorporated – 100V NPN LOW SATURATION MEDIUM POWER TRANSISTOR IN SOT89

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ZXTN2011Z
Maximum Ratings (@T_A = +25°C, unless otherwise specified.)
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Peak Pulse Current
Symbol
V_CBO
V_CEO
V_EBO
I_C
I_CM
Value
Unit
200
V
100
V
7
V
4.5
A
10
A
Thermal Characteristics (@T_A = +25°C, unless otherwise specified.)
Characteristic
Power Dissipation (Note 5)
Linear derating factor
Power Dissipation (Note 6)
Linear derating factor
Thermal Resistance, Junction to Ambient (Note 5)
Thermal Resistance, Junction to Ambient (Note 6)
Thermal Resistance, Junction to Ambient (Note 7)
Operating and Storage Temperature Range
Symbol
P_D
P_D
R_θJA
R_θJA
R_θJL
T_J, T_STG
Value
1.5
12
2.1
16.8
83
60
3.23
-55 to +150
Unit
W
mW/°C
W
mW/°C
°C/W
°C/W
°C/W
°C
ESD Ratings (Note 8)
Characteristic
Electrostatic Discharge - Human Body Model
Electrostatic Discharge - Machine Model
Symbol
ESD HBM
ESD MM
Value
4,000
≥ 400
Unit JEDEC Class
V
3A
V
C
Notes:
5. For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions; device
measured when operating in steady state condition.
6. Same as note (5), except the device is mounted on 50mm X 50mm single sided 1oz weight copper.
7. Thermal resistance from junction to solder-point (at the end of the collector lead).
8. Refer to JEDEC specification JESD22-A114 and JESD22-A115.
ZXTN2011Z
Datasheet Number: DS33663 Rev. 3 - 2
2 of 7
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December 2012
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