ZXTN2010Z_15 Datasheet, PDF (4/7 Pages) Diodes Incorporated – 60V NPN LOW SATURATION MEDIUM POWER TRANSISTOR IN SOT89

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ZXTN2010Z
Electrical Characteristics (@T_A = +25°C, unless otherwise specified.)
Characteristic
Symbol
Min
Typ
Collector-Base Breakdown Voltage
BV_CBO
150
190
Collector-Emitter Breakdown Voltage (Note 10)
BV_CER
150
190
Collector-Emitter Breakdown Voltage (Note 10)
BV_CEO
60
80
Emitter-Base Breakdown Voltage
BV_EBO
7
8.1
Collector Cutoff Current
I_CBO
—
<1
Collector Cutoff Current
I_CER
R ≤1kΩ
—
<1
Emitter Cutoff Current
I_EBO
—
<1
100
200
DC Current Transfer Static Ratio (Note 10)
100
200
h_FE
55
105
20
40
—
17
—
35
Collector-Emitter Saturation Voltage (Note 10)
V_CE(SAT)
—
40
—
90
—
170
Base-Emitter Saturation Voltage (Note 10)
V_BE(SAT)
—
970
Base-Emitter Turn-on Voltage (Note 10)
V_BE(ON)
—
910
Transitional Frequency
f_T
—
130
Output Capacitance
Switching Time
C_obo
—
31
t_ON
—
42
t_OFF
760
Note:
10. Measured under pulsed conditions. Pulse width ≤ 300μs. Duty cycle ≤ 2%.
Max
—
—
—
—
50
500
100
500
10
—
300
—
—
30
55
65
125
230
1100
1050
—
—
—
Unit
V
V
V
V
nA
nA
nA
nA
nA
—
mV
mV
mV
MHz
pF
ns
Test Condition
I_C = 100µA
I_C = 1µA, R_B ≤ 1kΩ
I_C = 10mA
I_E = 100µA
V_CB = 120V
V_CB = 120V, T_A = +100°C
V_CB = 120V
V_CB = 120V, T_A = +100°C
V_EB = 6V
I_C = 10mA, V_CE = 1V
I_C = 2A, V_CE = 1V
I_C = 5A, V_CE = 1V
I_C = 10A, V_CE = 1V
I_C = 100mA, I_B = 5mA
I_C = 1A, I_B = 100mA
I_C = 1A, I_B = 50mA
I_C = 2A, I_B = 50mA
I_C = 6A, I_B = 300mA
I_C = 6A, I_B = 300mA
I_C = 6A, V_CE = 1V
I_C = 100mA, V_CE = 10V,
f = 50MHz
V_CB = 10V, f = 1MHz,
V_CC = 10V, I_C = 1A,
I_B1 = I_B2 = 100mA
ZXTN2010Z
Datasheet Number: DS33661 Rev. 4 - 2
4 of 7
www.diodes.com
May 2013
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