ZXTN2010Z_15 Datasheet, PDF (2/7 Pages) Diodes Incorporated – 60V NPN LOW SATURATION MEDIUM POWER TRANSISTOR IN SOT89

Maximum Ratings (@T_A = +25°C, unless otherwise specified.)
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Peak Pulse Current
Symbol
V_CBO
V_CEO
V_EBO
I_C
I_CM
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ZXTN2010Z
Value
Unit
150
V
60
V
7
V
5
A
20
A
Thermal Characteristics (@T_A = +25°C, unless otherwise specified.)
Characteristic
Power Dissipation (Note 6)
Linear derating factor
Power Dissipation (Note 7)
Linear derating factor
Thermal Resistance, Junction to Ambient (Note 6)
Thermal Resistance, Junction to Ambient (Note 7)
Thermal Resistance, Junction to Leads (Note 8)
Operating and Storage Temperature Range
Symbol
P_D
P_D
R_θJA
R_θJA
R_θJL
T_J, T_STG
Value
1.5
12
2.1
16.8
83
60
3.23
-55 to +150
Unit
W
mW/°C
W
mW/°C
°C/W
°C/W
°C/W
°C
ESD Ratings (Note 9)
Characteristic
Electrostatic Discharge - Human Body Model
Electrostatic Discharge - Machine Model
Symbol
ESD HBM
ESD MM
Value
≥ 4,000
≥ 400
Unit JEDEC Class
V
3A
V
C
Notes:
6. For a device mounted with the exposed collector pad on 25mm x 25mm 1oz copper that is on a single-sided 1.6mm FR4 PCB; device is
measured under still air conditions whilst operating in a steady-state.
7. Same as note (6), except the device is mounted on 50mm x 50mm 1oz copper.
8. Thermal resistance from junction to solder-point (on the exposed collector pad).
9. Refer to JEDEC specification JESD22-A114 and JESD22-A115.
ZXTN2010Z
Datasheet Number: DS33661 Rev. 4 - 2
2 of 7
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May 2013
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