ZXTN2010Z_15 Datasheet, PDF (3/7 Pages) Diodes Incorporated – 60V NPN LOW SATURATION MEDIUM POWER TRANSISTOR IN SOT89

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Diodes Incorporated
ZXTN2010Z
Thermal Characteristics and Derating Information
V
10
CE(sat)
Limit
1
DC
1s
100m
100ms
10ms
Single Pulse. T =25°C
amb
10m
25x25mm 1oz Cu
1ms
100µs
100m
1
10
100
V Collector-Emitter Voltage (V)
CE
Safe Operating Area
2.0
50x50mm 1oz Cu
1.5
1.0
25x25mm 1oz Cu
0.5
0.0
0 20 40 60 80 100 120 140 160
Temperature (°C)
Derating Curve
80 _{25x25mm 1oz Cu}
60
D=0.5
40
D=0.2
20
Single Pulse
D=0.05
D=0.1
0
100µ 1m 10m 100m 1 10 100 1k
Pulse Width (s)
Transient Thermal Impedance
Single Pulse. T =25°C
amb
100
25x25mm 1oz Cu
10
1
100µ 1m 10m 100m 1 10 100 1k
Pulse Width (s)
Pulse Power Dissipation
ZXTN2010Z
Datasheet Number: DS33661 Rev. 4 - 2
3 of 7
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May 2013
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