ZXT953K_15 Datasheet, PDF (4/7 Pages) Diodes Incorporated – 100V PNP LOW SATURATION MEDIUM POWER TRANSISTOR

Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Collector-Base Breakdown Voltage
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage (Note 10)
Emitter-Base Breakdown Voltage
Collector Cut-Off Current
Emitter Cut-Off Current
Emitter Cut-Off Current
DC Current Transfer Static Ratio (Note 10)
Symbol
BVCBO
BVCER
BVCEO
BVEBO
ICBO
IEBO
ICER
hFE
Min
-140
-140
-100
-7
-
-
-
100
100
50
15
Typ.
-170
-170
-125
-8.1
<1
<1
<1
220
200
85
30
-
Collector-Emitter Saturation Voltage (Note 10)
VCE(sat)
-
-
-
Base-Emitter Saturation Voltage (Note 10)
Base-Emitter Turn-On Voltage (Note 10)
VBE(sat)
-
VBE(on)
-
Transitional Frequency
fT
-
Output Capacitance
Switching Times
COBO
-
tON
-
tOFF
Note:
10. Measured under pulsed conditions. Pulse width ≤ 300μs. Duty cycle ≤2%.
-20
-80
-140
-335
-1.01
-0.94
125
65
110
460
A Product Line of
Diodes Incorporated
ZXT953K
Max
-
-
-
-
-20
-10
-20
-
300
-
-
-30
-100
-175
-390
-1.1
-1.05
-
-
-
Unit
V
V
V
V
nA
nA
nA
-
mV
V
V
MHz
pF
nS
Test Condition
IC = -100µA
IC = -1µA, RBE ≤1kΩ
IC = -10mA
IE = -100µA
VCB = -100V
VEB = -6V
VCE = -100V, RBE ≤1kΩ
IC = -10mA, VCE = -1V
IC = -1A, VCE = -1V
IC = -3A, VCE = -1V
IC = -5A, VCE = -1V
IC = -0.1A, IB = -10mA
IC = -1A, IB = -100mA
IC = -2A, IB = -200mA
IC = -5A, IB = -500mA
IC = -5A, IB = -500mA
IC = -5A, VCE = -1V
IC = -100mA, VCE = -10V
f = 50MHz
VCB = -10V, f = 1MHz,
IC = -2A, VCC = -10V,
IB1 = IB2 = -200mA
ZXT953K
Document number: DS33643 Rev. 2 - 2
4 of 7
www.diodes.com
June 2015
© Diodes Incorporated