ZXT953K_15 Datasheet, PDF (2/7 Pages) Diodes Incorporated – 100V PNP LOW SATURATION MEDIUM POWER TRANSISTOR

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Diodes Incorporated
ZXT953K
Absolute Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Collector-Base Voltage
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Base Current
Peak Pulse Collector Current
Symbol
BVCBO
BVCER
VCEO
VEBO
IC
IB
ICM
Value
-140
-140
-100
-7
-5
-0.5
-10
Unit
V
V
V
V
A
A
A
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)
Power Dissipation
Characteristic
Thermal Resistance, Junction to Ambient Air
Thermal Resistance, Junction to Leads
Operating and Storage Temperature Range
(Note 5)
(Note 6)
(Note 7)
(Note 5)
(Note 6)
(Note 7)
(Note 8)
Symbol
PD
RθJA
RθJL
TJ,TSTG
Value
2.1
3.2
4.2
59
39
30
1.8
-55 to +150
Unit
W
°C/W
°C/W
°C
ESD Ratings (Note 9)
Characteristic
Electrostatic Discharge - Human Body Model
Electrostatic Discharge - Machine Model
Symbol
ESD HBM
ESD MM
Value
4,000
400
Unit JEDEC Class
V
3A
V
C
Notes:
5. For a device mounted with the exposed collector pad on 25mm x 25mm 1oz copper that is on a single-sided 1.6mm FR4 PCB; device is measured
under still air conditions whilst operating in a steady-state.
6. Same as Note 5, except the device is mounted on 50mm x 50mm with 1oz copper.
7. Same as Note 5, except the device is mounted on 50mm x 50mm with 2oz copper.
8. Thermal resistance from junction to solder-point (at the end of the collector lead).
9. Refer to JEDEC specification JESD22-A114 and JESD22-A115.
ZXT953K
Document number: DS33643 Rev. 2 - 2
2 of 7
www.diodes.com
June 2015
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