ZXT953K_15 Datasheet, PDF (3/7 Pages) Diodes Incorporated – 100V PNP LOW SATURATION MEDIUM POWER TRANSISTOR

Thermal Characteristics and Derating Information
A Product Line of
Diodes Incorporated
ZXT953K
10 V
CE(sat)
Limit
10 V
CE(sat)
Limit
1
DC
1s
100m
100ms
10ms
T =25°C
amb
25mm x 25mm
1oz FR4
10m _100m
1
1ms
100µs
10
100
-V Collector-Emitter Voltage (V)
CE
Safe Operating Area
1 DC
1s
100m
10m
100ms
10ms
T =25°C
amb
50mm x 50mm
2oz FR4
1ms
100µs
0.1
1
10
100
-V Collector-Emitter Voltage (V)
CE
Safe Operating Area
60
T =25°C
amb
50 25mm x 25mm
1oz FR4
40
D=0.5
30
20
D=0.2
10
1000µ 1m
Single Pulse
D=0.05
D=0.1
10m 100m 1 10 100 1k
Pulse Width (s)
Transient Thermal Impedance
30
T =25°C
amb
25
50mm x 50mm
2oz FR4
20
D=0.5
15
10 _D=0.2
Single Pulse
5
D=0.05
D=0.1
1000µ 1m 10m 100m 1 10 100 1k
Pulse Width (s)
Transient Thermal Impedance
Single Pulse
T =25°C
amb
100
50mm x 50mm
2oz FR4
10
25mm x 25mm
1oz FR4
1010µ 1m 10m 100m 1 10 100 1k
Pulse Width (s)
Pulse Power Dissipation
4.5
4.0
50mm x 50mm
3.5
2oz FR4
3.0
25mm x 25mm
2.5
1oz FR4
2.0
1.5
1.0
0.5
0.00 _{20 40 60 80 100 120 140 160}
Temperature (°C)
Derating Curve
ZXT953K
Document number: DS33643 Rev. 2 - 2
3 of 7
www.diodes.com
June 2015
© Diodes Incorporated