MMDT5451_15 Datasheet, PDF (4/5 Pages) SeCoS Halbleitertechnologie GmbH – Plastic-Encapsulated Transistor

10,000
1,000
100
10
1
1
10
100
1,000
I_C, COLLECTOR CURRENT (mA)
Fig. 7, DC Current Gain vs. Collector Current (PNP5401)
1,000
V_CE = 10V
100
10
1
1
10
100
I_C, COLLECTOR CURRENT (mA)
Fig. 9, Gain Bandwidth Product
vs. Collector Current (PNP5401)
1.0
V_CE = 5V
0.9
0.8
T_A = -50°C
0.7
0.6
T_A = 25°C
0.5
0.4
T_A = 150°C
0.3
0.2
0.1
0.1
1.0
10
100
I_C, COLLECTOR CURRENT (mA)
Fig. 8, Base Emitter Voltage
vs. Collector Current (PNP5401)
DS30171 Rev. 9 - 2
4 of 5
www.diodes.com
MMDT5451
© Diodes Incorporated