MMDT5451_15 Datasheet, PDF (3/5 Pages) SeCoS Halbleitertechnologie GmbH – Plastic-Encapsulated Transistor

200
150
100
50
0
0 25 50 75 100 125 150 175 200
T_A, AMBIENT TEMPERATURE (°C)
Fig. 1, Max Power Dissipation vs.
Ambient Temperature (Total Device)
1,000
V_CE = 5V
T_A = 150°C
100
T_A = 25°C
T_A = -50°C
10
1
1
1,000
10
100
I_C, COLLECTOR CURRENT (mA)
Fig. 3, DC Current Gain vs.
Collector Current (NPN5551)
0.15
0.14
0.13
I_C
I_B ^{= 10}
0.12
0.11
0.10
T_A = 150°C
0.09
0.08
0.07
0.06
T_A = 25°C
0.05
0.04
1
T_A = -50°C
10
100
1,000
I_C, COLLECTOR CURRENT (mA)
Fig. 2, Collector Emitter Saturation Voltage
vs. Collector Current (NPN5551)
1.0
V_CE = 5V
0.9
0.8
T_A = -50°C
0.7
0.6
T_A = 25°C
0.5
0.4
T_A = 150°C
0.3
0.2
0.1
1
10
100
I_C, COLLECTOR CURRENT (mA)
Fig. 4, Base Emitter Voltage
vs. Collector Current (NPN5551)
10.0
I_C
I_B
=
10
100
1.0
T_A = 150°C
10
1
1
10
100
I_C, COLLECTOR CURRENT (mA)
Fig. 5, Gain Bandwidth Product vs.
Collector Current (NPN5551)
0.1
T_A = -50°C
0.01
1
T_A = 25°C
10
100
1,000
I_C, COLLECTOR CURRENT (mA)
Fig. 6, Collector Emitter Saturation Voltage
vs. Collector Current (PNP5401)
DS30171 Rev. 9 - 2
3 of 5
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MMDT5451
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