English
Language : 

MMDT5451_15 Datasheet, PDF (2/5 Pages) SeCoS Halbleitertechnologie GmbH – Plastic-Encapsulated Transistor
◁
Electrical Characteristics, NPN 5551 Section @TA = 25°C unless otherwise specified
Characteristic
OFF CHARACTERISTICS (Note 6)
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
ON CHARACTERISTICS (Note 6)
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
Small Signal Current Gain
Current Gain-Bandwidth Product
Noise Figure
Symbol Min
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IEBO
180
160
6.0
⎯
⎯
80
hFE
80
30
VCE(SAT)
⎯
VBE(SAT)
⎯
Cobo
⎯
hfe
50
fT
100
NF
⎯
Max
⎯
⎯
⎯
50
50
⎯
250
⎯
0.15
0.20
1.0
6.0
250
300
8.0
Unit
Test Condition
V IC = 100μA, IE = 0
V IC = 1.0mA, IB = 0
V IE = 10μA, IC = 0
nA VCB = 120V, IE = 0
μA VCB = 120V, IE = 0, TA = 100°C
nA VEB = 4.0V, IC = 0
IC = 1.0mA, VCE = 5.0V
⎯ IC = 10mA, VCE = 5.0V
IC = 50mA, VCE = 5.0V
V IC = 10mA, IB = 1.0mA
IC = 50mA, IB = 5.0mA
V IC = 10mA, IB = 1.0mA
IC = 50mA, IB = 5.0mA
pF
⎯
MHz
dB
VCB = 10V, f = 1.0MHz, IE = 0
VCE = 10V, IC = 1.0mA,
f = 1.0kHz
VCE = 10V, IC = 10mA,
f = 100MHz
VCE = 5.0V, IC = 200μA,
RS = 1.0kΩ, f = 1.0kHz
Electrical Characteristics, PNP 5401 Section @TA = 25°C unless otherwise specified
Characteristic
OFF CHARACTERISTICS (Note 6)
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
ON CHARACTERISTICS (Note 6)
DC Current Gain
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IEBO
hFE
Collector-Emitter Saturation Voltage
VCE(SAT)
Base-Emitter Saturation Voltage
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
Small Signal Current Gain
VBE(SAT)
Cobo
hfe
Current Gain-Bandwidth Product
fT
Noise Figure
NF
Notes: 6. Short duration pulse test used to minimize self-heating effect.
Min
-160
-150
-5.0
⎯
⎯
50
60
50
⎯
⎯
⎯
40
100
⎯
Max
⎯
⎯
⎯
-50
-50
⎯
240
⎯
-0.2
-0.5
-1.0
6.0
200
300
8.0
Unit
Test Condition
V IC = -100μA, IE = 0
V IC = -1.0mA, IB = 0
V IE = -10μA, IC = 0
nA VCB = -120V, IE = 0
μA VCB = -120V, IE = 0, TA = 100°C
nA VEB = -3.0V, IC = 0
IC = -1.0mA, VCE = -5.0V
⎯ IC = -10mA, VCE = -5.0V
IC = -50mA, VCE = -5.0V
V IC = -10mA, IB = -1.0mA
IC = -50mA, IB = -5.0mA
V IC = -10mA, IB = -1.0mA
IC = -50mA, IB = -5.0mA
pF
⎯
MHz
dB
VCB = -10V, f = 1.0MHz, IE = 0
VCE = -10V, IC = -1.0mA,
f = 1.0kHz
VCE = -10V, IC = -10mA,
f = 100MHz
VCE = -5.0V, IC = -200μA,
RS = 10Ω, f = 1.0kHz
DS30171 Rev. 9 - 2
2 of 5
www.diodes.com
MMDT5451
© Diodes Incorporated
 ▷