HBDM60V600W_08 Datasheet, PDF (4/7 Pages) Diodes Incorporated – COMPLEX TRANSISTOR ARRAY FOR BIPOLAR

HBDM60V600W
1.0
V_CE = 5V
0.9
1,000
0.8
T_A = -50°C
0.7
100
0.6
T_A = 25°C
0.5
10
0.4
T_A = 150°C
0.3
0.2
0.1
1
10
100
-I_C, COLLECTOR CURRENT (mA)
Fig. 6 Typical Base Emitter Voltage vs. Collector Current
NPN (MMBTA06) Transistor (Q2) Plots
10
1
0.1
0.01
25
50
75
100
125
T_A, AMBIENT TEMPERATURE (ºC)
Fig. 8 Typical Collector-Cutoff Current vs. Ambient Temperature
0.500
0.450
0.400
I_C
I_B = 10
0.350
0.300
0.250
0.200
0.150
T_A = 25°C
T_A = 150°C
0.100
0.050
0
1
T_A = -50°C
10
100
1,000
I_C, COLLECTOR CURRENT (mA)
Fig. 10 Typical Collector Emitter Saturation Voltage vs. Collector Current
1
1
10
100
-I_C, COLLECTOR CURRENT (mA)
Fig. 7 Typical Gain Bandwidth Product vs. Collector Current
2.0
1.8
1.6
1.4
1.2
I_C = 10mA
1.0
0.8
I_C = 30mA
0.6
0.4
I_C = 1mA
0.2
I_C = 100mA
0
0.001 0.01
0.1
1
10 100
I_B, BASE CURRENT (mA)
Fig. 9 Typical Collector Saturation Region
10,000
1,000
100
10
1
1
10
100
1,000
I_C, COLLECTOR CURRENT (mA)
Fig. 11 Typical DC Current Gain vs. Collector Current
HBDM60V600W
Document number: DS30701 Rev. 5 - 2
4 of 7
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July 2008
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