HBDM60V600W_08 Datasheet, PDF (2/7 Pages) Diodes Incorporated – COMPLEX TRANSISTOR ARRAY FOR BIPOLAR

HBDM60V600W
Electrical Characteristics: PNP (MMBT2907A) Transistor (Q1) @T_A = 25°C unless otherwise specified
Characteristic
OFF CHARACTERISTICS (Note 4)
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Collector Cutoff Current
Base Cutoff Current
ON CHARACTERISTICS (Note 4)
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
SMALL SIGNAL CHARACTERISTICS
Current Gain-Bandwidth Product
SWITCHING CHARACTERISTICS
Turn-On Time
Delay Time
Rise Time
Turn-Off Time
Storage Time
Fall Time
Symbol
Min
Max Unit
Test Condition
V_(BR)CBO
V_(BR)CEO
V_(BR)EBO
I_CBO
I_CEX
I_BL
-60
-60
-5.5
⎯
⎯
⎯
⎯
V I_C = -10μA, I_E = 0
⎯
V I_C = -10mA, I_B = 0
⎯
V I_E = -10μA, I_C = 0
-10
nA V_CB = -50V, I_E = 0
-50
nA V_CE = -30V, V_EB(OFF) = -0.5V
-50
nA V_CE = -30V, V_EB(OFF) = -0.5V
100
⎯
⎯ ^IC ^{= -100μA, V}CE ^{= -10V}
100
⎯
⎯ IC = -1.0mA, VCE = -10V
h_FE
100
⎯
⎯ I_C = -10mA, V_CE = -10V
100
300
⎯ I_C = -150mA, V_CE = -10V
50
⎯
⎯ _{IC = -500mA, VCE = -10V}
V_CE(SAT)
⎯
-0.3
-0.5
V ^{IC = -150mA, IB = -15mA}
I_C = -500mA, I_B = -50mA
V_BE(SAT)
⎯
-0.95
-1.3
V ^{IC = -150mA, IB = -15mA}
I_C = -500mA, I_B = -50mA
f_T
100
⎯
MHz ^{VCE = -2.0V, IC = -10mA,}
f = 100MHz
t_on
t_d
t_r
⎯
45
ns
⎯
⎯
10
ns ^{VCE = -30V, IC = -150mA,}
40
ns ^{IB1 = -15mA}
t_off
t_s
t_r
⎯
100
ns
⎯
⎯
80
30
ns
ns
V_CC = -6.0V, I_C = -150mA,
I_B1 = I_B2 = -15mA
Electrical Characteristics: NPN (MMBTA06) Transistor (Q2) @T_A = 25°C unless otherwise specified
Characteristic
OFF CHARACTERISTICS (Note 4)
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector-Base Cutoff Current
Collector Cutoff Current
Emitter-Base Cutoff Current
ON CHARACTERISTICS (Note 4)
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Turn-on Voltage
Base-Emitter Saturation Voltage
SMALL SIGNAL CHARACTERISTICS
Current Gain-Bandwidth Product
Symbol
Min
Typ Max Unit
Test Condition
V_(BR)CBO
80
V_(BR)CEO
65
V_(BR)EBO
6
I_CBO
⎯
I_CES
⎯
I_EBO
⎯
⎯
⎯
V I_C = 100μA, I_E = 0
⎯
⎯
V I_C = 1mA, I_B = 0
⎯
⎯
V I_E = 100μA, I_C = 0
⎯
100
nA V_CB = 80V, I_E = 0
⎯
100
nA V_CE = 90V, V_BE = 0
⎯
100
nA V_EB = 5V, I_C = 0
h_FE
250
⎯
⎯
⎯ V_CE = 1V, I_C = 10mA
100
⎯
⎯
⎯ V_CE = 1V, I_C = 100mA
V_CE(SAT)
⎯
0.2
0.4
V I_C = 100mA, I_B = 10mA
V_BE(ON)
0.7
0.75 0.8
V V_CE = 1V, I_C = 100mA
V_BE(SAT)
⎯
⎯
0.95
V I_C = 100mA, I_B = 5mA
f_T
100
⎯
⎯
MHz
V_CE = 20V, I_C = 10mA,
f = 100MHz
Notes: 4. Short duration pulse test used to minimize self-heating effect.
HBDM60V600W
Document number: DS30701 Rev. 5 - 2
2 of 7
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July 2008
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