HBDM60V600W_08 Datasheet, PDF (3/7 Pages) Diodes Incorporated – COMPLEX TRANSISTOR ARRAY FOR BIPOLAR

Typical Characteristics @T_A = 25°C unless otherwise specified
200
150
HBDM60V600W
100
50
0
0 25 50 75 100 125 150 175 200
T_A, AMBIENT TEMPERATURE (°C)
Fig. 1 Power Derating Curve
PNP (MMBT2907A) Transistor (Q1) Plots:
30
20
10
Cibo
5.0
Cobo
1.0
0.1
1.0
10
30
REVERSE VOLTAGE (V)
Fig. 2 Typical Capacitance
0.6
I_C
I_B
=
10
0.5
0.4
0.3
T_A = 150°C
0.2
T_A = 25°C
1.6
1.4
I_C = 10mA
I_C = 300mA
I_C = 100mA
1.2
I_C = 1mA
I_C = 30mA
1.0
0.8
0.6
0.4
0.2
0
0.001
0.01
0.1
1
10
100
-I_B, BASE CURRENT (mA)
Fig. 3 Typical Collector Saturation Region
1,000
V_CE = 5V
T_A = 150°C
100
T_A = 25°C
T_A = -50°C
10
0.1
T_A = -50°C
0
1
10
100
1,000
-I_C, COLLECTOR CURRENT (mA)
Fig. 4 Collector Emitter Saturation Voltage vs. Collector Current
HBDM60V600W
Document number: DS30701 Rev. 5 - 2
3 of 7
www.diodes.com
1
1
10
100
1,000
-I_C, COLLECTOR CURRENT (mA)
Fig. 5 Typical DC Current Gain vs. Collector Current
July 2008
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