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| DSS4160DS_15 Datasheet, PDF (4/7 Pages) Diodes Incorporated – 60V DUAL NPN LOW SATURATION TRANSISTOR IN SOT26 | |||
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DSS4160DS
Electrical Characteristics - Q1 & Q2 common (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Min
Collector-Base Breakdown Voltage
BVCBO
80
Collector-Emitter Breakdown Voltage (Note 13)
BVCEO
60
Emitter-Base Breakdown Voltage
BVEBO
5
Collector-Base Cutoff Current
ICBO
ï¾
ï¾
Collector-Emitter Cutoff Current
Emitter-Base Cutoff Current
ICES
ï¾
IEBO
ï¾
250
DC Current Gain (Note 13)
hFE
200
100
Collector-Emitter Saturation Voltage (Note 13)
Equivalent On-Resistance
Base-Emitter Saturation Voltage (Note 13)
Base-Emitter Turn-On Voltage (Note 13)
Output Capacitance
ï¾ï
VCE(sat)
ï¾ï
ï¾
RCE(sat)
ï¾
VBE(sat)
ï¾
VBE(on)
ï¾
Cobo
ï¾
Transition Frequency
fT
150
Turn-On Time
Delay Time
Rise Time
Turn-Off Time
Storage Time
Fall Time
ton
ï¾
td
ï¾
tr
ï¾
toff
ï¾
ts
ï¾
tf
ï¾
Notes: 13. Measured under pulsed conditions. Pulse width ⤠300 µs. Duty cycle ⤠2%
Typ Max
ï¾
ï¾
ï¾
ï¾
ï¾
ï¾
ï¾
100
ï¾
50
ï¾
100
ï¾
100
380
ï¾ï
420
ï¾ï
380
ï¾
60
110
70
140
100 250
100 250
940 1100
780 900
5.5
10
220
ï¾
63
ï¾
33
ï¾
30
ï¾
420
ï¾
380
ï¾
40
ï¾
Unit
V
V
V
nA
µA
nA
nA
ï¾ï
mV
mâ¦
mV
mV
pF
MHz
ns
ns
ns
ns
ns
ns
Test Condition
IC = 100µA
IC = 10mA
IE = 100µA
VCB = 60V, IE = 0A
VCB = 60V, IE = 0A, TJ = +150°C
VCES = 60V, VBE = 0V
VEB = 5V, IC = 0A
IC = 1mA, VCE = 5V
IC = 500mA, VCE = 5V
IC = 1A, VCE = 5V
IC = 100mA, IB = 1mA
IC = 500mA, IB = 50mA
IC = 1A, IB = 100mA
IC = 1A, IB = 100mA
IC = 1A, IB = 50mA
IC = 1A, VCE = 5V
VCB = 10V, f = 1MHz
VCE = 10V, IC = 50mA
f = 100MHz
VCC = 10V, IC = 0.5A
IB1 = -IB2 = 25mA
DSS4160DS
Document number DS36556 Rev. 1 â 2
4 of 7
www.diodes.com
November 2013
© Diodes Incorporated
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