DSS4160DS_15 Datasheet, PDF (3/7 Pages) Diodes Incorporated – 60V DUAL NPN LOW SATURATION TRANSISTOR IN SOT26

DSS4160DS
Thermal Characteristics and Derating Information
V_CE(sat)
1 ^Limit
DC
1s
100m
100ms _10ms
T_amb=25°C
25mm x 25mm
1ms
100µs
1oz FR4
10m
100m
1
10
V_CE Collector-Emitter Voltage (V)
Safe Operating Area
140
120
T_amb=25°C
25mm x 25mm
100
1oz FR4
80 D=0.5
60
40 D=0.2
Single Pulse
D=0.05
20
D=0.1
0
100µ 1m 10m 100m 1
10 100 1k
Pulse Width (s)
Transient Thermal Impedance
120
T_amb=25°C
100 50mm x 50mm
2oz FR4
80
D=0.5
60
40 _D=0.2
Single Pulse
D=0.05
20
D=0.1
0
100µ 1m 10m 100m 1
10 100 1k
Pulse Width (s)
Transient Thermal Impedance
100
Single Pulse
T_amb=25°C
10
50mm x 50mm
2oz FR4
1
25mm x 25mm
1oz FR4
100µ 1m 10m 100m 1 10 100 1k
Pulse Width (s)
Pulse Power Dissipation
2.0
50mm x 50mm 2oz FR4
One active die t<5secs
1.5
25mm x 25mm 1oz FR4
Two active die
50mm x 50mm 2oz FR4
One active die
1.0
25mm x 25mm 1oz FR4
one active die
0.5
15mm x 15mm 1oz FR4
one active die
0.0
0 20 40 60 80 100 120 140 160
Temperature (°C)
Derating Curve
DSS4160DS
Document number DS36556 Rev. 1 – 2
3 of 7
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November 2013
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