DSS4160DS_15 Datasheet, PDF (2/7 Pages) Diodes Incorporated – 60V DUAL NPN LOW SATURATION TRANSISTOR IN SOT26

DSS4160DS
Absolute Maximum Ratings – Q1 & Q2 Common (@T_A = +25°C, unless otherwise specified.)
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Peak Pulse Collector Current
Base current
Peak Pulse Base current
Symbol
V_CBO
V_CEO
V_EBO
I_C
I_CM
I_B
I_BM
Value
80
60
5
1
2
300
1
Unit
V
V
V
A
A
mA
A
Thermal Characteristics (@T_A = +25°C, unless otherwise specified.)
Characteristic
(Notes 5 & 9)
Symbol
Power Dissipation
Linear Derating Factor
(Notes 6 & 9)
(Notes 6 & 10)
P_D
(Notes 7 & 9)
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Lead
Operating and Storage Temperature Range
(Notes 8 & 9)
(Notes 5 & 9)
(Notes 6 & 9)
(Notes 6 & 10)
(Notes 7 & 9)
(Notes 8 & 9)
(Note 11)
R_JA
R_JL
T_J, T_STG
Value
0.7
5.6
0.9
7.2
1.1
8.8
1.1
8.8
1.7
13.6
179
139
113
113
73
96
-55 to +150
Unit
W
mW/C
C/W
C
ESD Ratings (Note 12)
Characteristic
Electrostatic Discharge - Human Body Model
Electrostatic Discharge - Machine Model
Symbol
ESD HBM
ESD MM
Value
4,000
400
Unit
JEDEC Class
V
3A
V
C
Notes:
5. For a device mounted with the collector lead on 15mm x 15mm 1oz copper that is on a single-sided 1.6mm FR4 PCB; device is measured under still air
conditions whilst operating in a steady-state.
6. Same as note (5), except the device is mounted on 25mm x 25mm 1oz copper.
7. Same as note (5), except the device is mounted on 50mm x 50mm 2oz copper.
8. Same as note (7), except the device is measured at t < 5 seconds.
9. One active die operating with the collector attached to the heatsink.
10. Two active dice running at equal power with heatsink split 50% to each collector.
11. Thermal resistance from junction to solder-point (at the end of the collector lead).
12. Refer to JEDEC specification JESD22-A114 and JESD22-A115.
DSS4160DS
Document number DS36556 Rev. 1 – 2
2 of 7
www.diodes.com
November 2013
© Diodes Incorporated