DMN65D8L-7 Datasheet, PDF (4/6 Pages) Diodes Incorporated – N-CHANNEL ENHANCEMENT MODE MOSFET

DMN65D8L
1
1,000
0.1
0.01
T_A = 150°C
T_A = 125°C
T_A = 85°C
T_A = 25°C
T_A = -55°C
0.001
0
0.2 0.4 0.6 0.8 1.0 1.2
V_SD, SOURCE-DRAIN VOLTAGE (V)
Figure 7. Diode Forward Voltage vs. Current
50
45
f = 1MHz
40
35
30
25
C_iss
20
15
10
C_oss
5
0
C_rss
0
5
10
15
20
25
V_DS, DRAIN-SOURCE VOLTAGE (V)
Figure 9. Typical Junction Capacitance
100
T_A = 150°C
T_A = 125°C
10
T_A = -55°C ^TA ^{= 25°C TA = 85°C}
1
0
10
20
30
40
50
V_DS, DRAIN-SOURCE VOLTAGE (V)
Figure 8. Typical Drain-Source Leakage Current vs. Voltage
DMN65D8L
Document number: DS35923 Rev. 2 - 2
4 of 6
www.diodes.com
August 2012
© Diodes Incorporated