DMN65D8L-7 Datasheet, PDF (3/6 Pages) Diodes Incorporated – N-CHANNEL ENHANCEMENT MODE MOSFET

0.6
0.5
0.4
0.3
0.2
0.1
0
0
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0
0
5
1
2
3
4
5
V_DS, DRAIN-SOURCE VOLTAGE (V)
Figure 1. Typical Output Characteristic
V_GS= 5V
V_GS= 10V
0.1 0.2 0.3 0.4 0.5 0.6
I_D, DRAIN CURRENT
Figure 3. Typical On-Resistance vs.
Drain Current and Temperature
4
3
V_GS = 5V
I_D = 115mA
2
V_GS = 10V
I_D = 115mA
1
0
- 50 -25 0 25 50 75 100 125 150
T_J, JUNCTION TEMPERATURE (°C)
Figure 5. On-Resistance Variation with Temperature
1
V_DS = 5.0V
DMN65D8L
0.1
T_A = 150°C
T_A = 125°C
0.01
0
T_A = 85°C
T_A = 25°C
T_A = -55°C
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
V_GS, GATE-SOURCE VOLTAGE
Figure 2. Typical Transfer Characteristics
2.4
2.2
2.0
V_GS = 10V
I_D = 115mA
1.8
1.6
1.4
V_GS = 5V
I_D = 115mA
1.2
1.0
0.8
0.6
0.4
50 -25 0 25 50 75 100 125 150
T_J, JUNCTION TEMPERATURE (°C)
Figure 4. On-Resistance Variation with Temperature
2.0
1.8
1.6
1.4
I_D = 1mA
1.2
I_D = 250µA
1.0
0.8
0.6
0.4
0.2
0
-50 -25 0 25 50 75 100 125 150
T_J, JUNCTION TEMPERATURE (°C)
Figure 6. Gate Threshold Variation vs. Ambient Temperature
DMN65D8L
Document number: DS35923 Rev. 2 - 2
3 of 6
www.diodes.com
August 2012
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