DMN2058U Datasheet, PDF (4/7 Pages) Diodes Incorporated – 20V N-CHANNEL ENHANCEMENT MODE MOSFET

0.1
0.09
0.08
0.07
0.06
0.05
V_GS = 2.5V
I_D = 3.1A
V_GS = 1.5V
I_D = 2A
0.04
0.03
0.02
V_GS = 4.5V
I_D = 3.6A
V_GS = 4.5V
I_D = 3.6A
0.01
0-50 _{-25 0 25 50 75 100 125 150}
T_J, JUNCTION TEMPERATURE (C)
Figure 7 On-Resistance Variation with Temperature
20
18
16
14
12
10
8
T_A = 150°C
T_A = 25°C
6
T_A = 125°C
T_A = -55°C
4
T_A = 85°C
2
00
10
0.3
0.6
0.9
1.2
1.5
V_SD, SOURCE-DRAIN VOLTAGE (V)
Figure 9 Diode Forward Voltage vs. Current
8
6
4
V_DS = 10V
I_D = 6A
2
00
12
3
4
5
6
7
8
Q_g, TOTAL GATE CHARGE (nC)
Figure 11 Gate Charge
DMN2058U
1
0.9
0.8
0.7
I_D = 1mA
0.6
0.5
I_D = 250µA
0.4
0.3
0.2
0.1
0-50 _{-25 0 25 50 75 100 125 150}
T_J, JUNCTION TEMPERATURE (C)
Figure 8 Gate Threshold Variation vs. Ambient Temperature
1000
f = 1MHz
C _iss
100
C_oss
C _rss
10 ₀
100
5
10
15
20
V_DS , DRAIN-SOURCE VOLTAGE (V)
Figure 10 Typical Junction Capacitance
R _DS(on)
Limited
P_W = 100µs
10
P_W = 1ms
DC
1
P_W = 10s
P_W = 1s
0.1
T_{J(m ax)} = 150°^PC^{W = 100ms}
T_C = 25°C
P_W = 10ms
V_GS = 4.5V
Single Pulse
DUT on 1 * MRP Board
0.001.1
1
10
100
V_DS, DRAIN-SOURCE VOLTAGE (V)
Figure 12 SOA, Safe Operation Area
DMN2058U
Document number: DS38468 Rev. 1 - 2
4 of 7
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June 2016
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