DMN2058U Datasheet, PDF (2/7 Pages) Diodes Incorporated – 20V N-CHANNEL ENHANCEMENT MODE MOSFET

Maximum Ratings (@TA = +25°C unless otherwise specified.)
Drain-Source Voltage
Gate-Source Voltage
Characteristic
Continuous Drain Current (Note 6) VGS = 10V
Maximum Body Diode Forward Current (Note 6)
Pulsed Drain Current (10µs Pulse, Duty Cycle = 1%)
Steady
State
TA = +25°C
TA = +70°C
Symbol
VDSS
VGSS
ID
IS
IDM
DMN2058U
Value
20
±12
4.6
3.7
1.2
24
Units
V
V
A
A
A
Thermal Characteristics
Characteristic
Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient (Note 5)
Power Dissipation (Note 6)
Thermal Resistance, Junction to Ambient (Note 6)
Operating and Storage Temperature Range
Steady State
Steady State
Symbol
PD
RθJA
PD
RθJA
TJ, TSTG
Value
0.74
172
1.13
111
-55 to +150
Unit
W
°C/W
W
°C/W
°C
Electrical Characteristics (@TA = +25°C unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge (VGS = 4.5V)
Total Gate Charge (VGS = 10V)
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Symbol
BVDSS
IDSS
IGSS
VGS(TH)
RDS(ON)
VSD
CISS
COSS
CRSS
RG
QG
QG
QGS
QGD
tD(ON)
tR
tD(OFF)
tF
tRR
QRR
Min
20


0.4



















Typ
Max
Unit
Test Condition


V
VGS = 0V, ID = 250µA

1
µA V_DS = 20V, V_GS = 0V

100
nA V_GS = 12V, V_DS = 0V
0.6
1.2
V
VDS = VGS, ID = 250µA
27
35
VGS = 10V, ID = 6.0A
30
40
mΩ ^{VGS = 4.5V, ID = 5.0A}
37
60
VGS = 2.5V, ID = 4.0A
49
91
VGS = 1.8V, ID = 2.0A
0.7
1.2
V
VGS = 0V, IS = 1A
281

50

39

pF
VDS = 10V, VGS = 0V
f = 1.0MHz
3.1

Ω V_DS = 0V, V_GS = 0V, f = 1.0MHz
3.6

7.7
0.5


nC V_DS = 10V, I_D = 6.0A
0.9

2.0

4.9

ns
VGS = 4.5V, VDD = 10V, RG = 6Ω,
9.9

ID = 6.0A
3.3

5.4

ns I_F = 6.0A, di/dt = 100A/μs
0.7

nC I_F = 6.0A, di/dt = 100A/μs
Notes:
5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1-inch square copper plate.
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to product testing.
DMN2058U
Document number: DS38468 Rev. 1 - 2
2 of 7
www.diodes.com
June 2016
© Diodes Incorporated