DMN2058U Datasheet, PDF (3/7 Pages) Diodes Incorporated – 20V N-CHANNEL ENHANCEMENT MODE MOSFET

20 _{VGS = 10V}
18
16
V_GS = 4.5V
V_GS = 4.0V
V_GS = 3.0V
V_GS = 2.5V
V_GS = 2V
14
12
10
8
V_GS = 1.5V
6
4
V_GS = 1.2V
2
00
0.5
1
1.5
V_GS = 1V
2
2.5
3
V_DS, DRAIN-SOURCE VOLTAGE (V)
Figure 1 Typical Output Characteristic
0.1
0.09
0.08
0.07
0.06
V_GS = 1.8V
0.05
0.04
0.03
0.02
V_GS = 2.5V
V_GS = 4.5V
V_GS = 10V
0.01
00
0.06
2 4 6 8 10 12 14 16 18 20
I_D, DRAIN-SOURCE CURRENT (A)
Figure 3 Typical On-Resistance vs.
Drain Current and Gate Voltage
V_GS = 10V
0.05
0.04
T_A = 125°C ^TA ^{= 150°C}
T_A = 85°C
0.03
T_A = 25°C
0.02
T_A = -55°C
0.01
00 _{2 4 6 8 10 12 14 16 18 20}
I _D, DRAIN CURRENT (A)
Figure 5 Typical On-Resistance vs.
Drain Current and Temperature
DMN2058U
10
9 ^{VDS = 5.0V}
8
7
6
5
4
T_A = 150°C
T_A = 25°C
3
T_A = 125°C
T_A = -55°C
2
T_A = 85°C
1
00
0.5
1
1.5
2
2.5
V_GS, GATE-SOURCE VOLTAGE (V)
Figure 2 Typical Transfer Characteristics
0.1
0.09
0.08
0.07
0.06
0.05
I_D = 6A
0.04 I_D = 2A
0.03
0.02
0.01
00
2
4
6
8
10
12
V_GS, GATE-SOURCE VOLTAGE (V)
Figure 4 Typical Drain-Source On-Resistance
vs. Gate-Source Voltage
2.5
2
V_GS = 1.5V
V_GS = 2.5V _{ID = 2A}
I_D = 4A
1.5
V_GS = 1.5V
1
V_GS = 4.5V _{ID = 2A}
I_D = 6A
0.5
0-50 _{-25 0 25 50 75 100 125 150}
T_J, JUNCTION TEMPERATURE (C)
Figure 6 On-Resistance Variation with Temperature
DMN2058U
Document number: DS38468 Rev. 1 - 2
3 of 7
www.diodes.com
June 2016
© Diodes Incorporated