BFS17N Datasheet, PDF (4/6 Pages) Diodes Incorporated – NPN RF TRANSISTOR IN SOT-23

Typical Characteristics
A Product Line of
Diodes Incorporated
BFS17N
200
150
100
50
0
0.1
T=150°C
T=85°C
T=25°C
T=-55°C
V =5V
CE
1
10
100
I Collector Current (mA)
C
1100
1000
900
800
700
600
500
400
0.1
T=25°C
T=-55°C
T=85°C
T=150°C
V =5V
CE
1
10
100
I Collector Current (mA)
C
4
V =10V
CE
3
2
V =5V
CE
1
Tamb=25°C
f=500MHz
0
0.0 5.0 10.0
V =1V
CE
15.0 20.0
V =2V
CE
25.0 30.0
I Collector Current (mA)
C
0.06 Ten base steps
100μA per step
0.05
0.04
0.03
0.02
0.01
0.00
0 1 2 3 4 5 6 7 8 9 10
V (V)
CE
1.6
1.5
1.4
1.3
1.2
1.1
1.0
0.9
0.0
Ta=25°C
f=1MHz
0.5 1.0 1.5 2.0 2.5 3.0
V Emitter-Base Voltage (V)
EB
1.4
Ta=25°C
f=1MHz
1.2
1.0
0.8
0.6
0
5
10
15
20
V Collector-Base Voltage (V)
CB
BFS17N
Document Number DS32160 Rev. 2 - 2
4 of 6
www.diodes.com
August 2010
© Diodes Incorporated