BFS17N Datasheet, PDF (2/6 Pages) Diodes Incorporated – NPN RF TRANSISTOR IN SOT-23

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Diodes Incorporated
BFS17N
Maximum Ratings @T_A = 25°C unless otherwise specified
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Symbol
V_CBO
V_CEO
V_EBO
I_C
Value
20
11
3
50
Unit
V
V
V
mA
Thermal Characteristics
Characteristic
Power Dissipation at T_A = 25°C (Note 4)
Thermal Resistance, Junction to Ambient (Note 4) @ T_A = 25°C
Operating and Storage Temperature Range
Symbol
P_D
R_θJA
T_J, T_STG
Value
330
380
-55 to +150
Unit
mW
°C/W
°C
Notes: 4. For a device surface mounted on 15mm X 15mm X 1.6mm FR4 PCB with high coverage of single sided 1 oz copper, in still air conditions
Thermal Characteristics and Derating information
350
300
250
200 ^D=0.5
150
100 ^D=0.2
Single Pulse
D=0.05
50
D=0.1
0
100µ 1m 10m 100m 1 10 100 1k
Pulse Width (s)
Transient Thermal Impedance
0.40
0.35
0.30
0.25
0.20
0.15
0.10
0.05
0.00
0
20 40 60 80 100 120 140 160
Temperature (°C)
Derating Curve
BFS17N
Document Number DS32160 Rev. 2 - 2
2 of 6
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August 2010
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