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BFS17N Datasheet, PDF (3/6 Pages) Diodes Incorporated – NPN RF TRANSISTOR IN SOT-23 | |||
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A Product Line of
Diodes Incorporated
BFS17N
Electrical Characteristics @TA = 25°C unless otherwise specified
Characteristic
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage (Note 5)
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
Static Forward Current Transfer Ratio (Note 5)
Collector-Emitter Saturation Voltage (Note 5)
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IEBO
hFE
VCE(sat)
Min Typ Max
20
â
â
11
â
â
3
â
â
â
â
0.5
â
â
0.5
56
â
180
â
â
0.5
Transition Frequency (Note 5)
fT
1.4
3.2
â
Collector Output Capacitance (Note 5)
Cob
â
Notes: 5. Measured under pulsed conditions. Pulse width ⤠300µs. Duty cycle ⤠2%
0.8
1.5
Unit
V
V
V
µA
µA
â
V
GHz
pF
Test Condition
IC = 10µA
IC = 1mA
IE = 10µA
VCB = 10V
VEB = 2V
IC = 5mA, VCE = 10V
IC = 25mA, IB = 5mA
IE = 25mA, VCE = 5V,
f = 500MHz
VCB = 10V, f = 1MHz
BFS17N
Document Number DS32160 Rev. 2 - 2
3 of 6
www.diodes.com
August 2010
© Diodes Incorporated
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