FZT857 Datasheet, PDF (3/3 Pages) Zetex Semiconductors – NPN SILICON PLANAR HIGH CURRENT (HIGH PERFORMANCE)TRANSISTOR

FZT857
TYPICAL CHARACTERISTICS
0.8
0.6
0.4
IC/IB=10
IC/IB=50
0.2
0
0.001
0.01
0.1
1
10
IC - Collector Current (Amps)
VCE(sat) v IC
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
0
300
200
VCE=10V
VCE=2V
100
0.01
0.1
1
10
IC - Collector Current (Amps)
hFE v IC
2.0
1.5
IC/IB=10
IC/IB=50
1.0
0.5
0.0001 0.001
0.01
0.1
1
10
IC - Collector Current (Amps)
VBE(sat) v IC
10
Single Pulse Test Tamb=25 °C
1
DC
1s
0.1 100ms
10ms
1ms
100µs
0.01
1
10
100
VCE - Collector Voltage (V)
Safe Operating Area
1000
VCE=5V
2.0
1.5
1.0
0.5
0.0001 0.001
0.01
0.1
1
10
IC - Collector Current (Amps)
VBE(on) v IC