FZT857 Datasheet, PDF (1/3 Pages) Zetex Semiconductors – NPN SILICON PLANAR HIGH CURRENT (HIGH PERFORMANCE)TRANSISTOR

SOT223 NPN SILICON PLANAR HIGH CURRENT
(HIGH PERFORMANCE)TRANSISTOR
ISSUE 5 - AUGUST 2003
FEATURES
* Up to 3.5 Amps continuous collector current, up to 5 Amp peak
* V_CEO = 300V
* Very low saturation voltage
* Excellent h_FE specified up to 3 Amps
PARTMARKING DETAIL - FZT857
COMPLEMENTARY TYPE - FZT957
FZT857
C
E
C
B
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current
Continuous Collector Current
Power Dissipation at T_amb=25°C
Operating and Storage Temperature Range
SYMBOL
V_CBO
V_CEO
V_EBO
I_CM
I_C
P_tot
T_j:T_stg
VALUE
350
300
6
5
3.5
3
-55 to +150
UNIT
V
V
V
A
A
W
°C
*The power which can be dissipated assuming the device is mounted in a typical manner on a
P.C.B. with copper equal to 2 inches square.