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| FZT857 Datasheet, PDF (2/3 Pages) Zetex Semiconductors – NPN SILICON PLANAR HIGH CURRENT (HIGH PERFORMANCE)TRANSISTOR | |||
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FZT857
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated)
PARAMETER
SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Collector-Base Breakdown V(BR)CBO 350 475
Voltage
V
IC=100µA
Collector-Emitter
Breakdown Voltage
V(BR)CER 350 475
V
IC=1µA, RB â¤1kâ¦
Collector-Emitter
Breakdown Voltage
V(BR)CEO 300 350
V
IC=10mA*
Emitter-Base Breakdown
V(BR)EBO 6
8
Voltage
V
IE=100µA
Collector Cut-Off Current
ICBO
Collector Cut-Off Current
ICER
R â¤1kâ¦
Emitter Cut-Off Current
Collector-Emitter
Saturation Voltage
IEBO
VCE(sat)
Base-Emitter
Saturation Voltage
VBE(sat)
50
nA
1
µA
50
nA
1
µA
10
nA
100 mV
155 mV
230 mV
345 mV
1250 mV
VCB=300V
VCB=300V,
T a m b= 1 0 0 ° C
VCB=300V
VCB=300V,
T a m b= 1 0 0 ° C
VEB=6V
IC=500mA, IB=50mA*
IC=1A, IB=100mA*
IC=2A, IB=200mA*
IC=3.5A, IB=600mA*
IC=3.5A, IB=600mA*
Base-Emitter
Turn-On Voltage
VBE(on)
1.12 V
IC=3.5A, VCE=10V*
Static Forward
Current Transfer
Ratio
hFE
100 200
100 200 300
15
25
15
IC=10mA, VCE=5V
IC=500mA, VCE=10V*
IC=2A, VCE=10V*
IC=3A, VCE=10V*
Transition Frequency
fT
80
MHz IC==100mA, VCE=10V
f=50MHz
Output Capacitance
Cobo
11
pF
Switching Times
ton
toff
100
ns
5300
ns
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle â¤2%
Spice parameter data is available upon request for this device
VCB=20V, f=1MHz
IC=250mA, IB1=25mA
IB2=25mA, VCC=50V
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