DT456P Datasheet, PDF (3/4 Pages) Diodes Incorporated – P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

-20
V_GS
=
-10V -5.0
-6.0 -4.5
-4.0
-16
-3.5
-12
-8
-3.0
-4
0
0
-2.5
-1
-2
-3
V_DFSig,.D1R, AOINn--RSOegUioRnCCEhVaOraLcTteArGisEtic(sV)
3.0
V_GS = -3.5V
2.5
-4.0
2.0
-4.5
-5.0
1.5
-6.0
1.0
-10
0.5
0
-4
-8
-12
-16
-20
I_D, DRAIN CURRENT (A)
Fig. 2, On-Resistance vs Drain Current and Gate Voltage
1.5
I_D = -7.5A
V_GS = -10V
1.25
1.0
0.75
-20
V_DS = -10V
-16
-12
-8
-4
T_J = -55 C ₁₂₅
25
0.5
-50 -25 0
25 50 75 100 125 150
FTig^j,.
JUNCTION TEMPERATURE ( C)
3, On-Resistance vs Temperature
0
-0.8
-1.6
-2.4
-3.2
-4
V_GS,FGigA. T4E,
TO SOURCE VOLTAGE
Transfer Characteristics
(V)
DS11614 Rev. C-4
3 of 4
DT456P