DT456P Datasheet, PDF (1/4 Pages) Diodes Incorporated – P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

DT456P
P-CHANNEL ENHANCEMENT MODE
FIELD EFFECT TRANSISTOR
Features
· High Cell Density DMOS Technology
· Low On-State Resistance
· High Power and Current Capability
· Fast Switching Speed
· High Transient Tolerance
A
B
D
SOT-223
Dim Min Max
A 6.30 6.71
B 2.90 3.10
C 6.71 7.29
CD
D 3.30 3.71
E 2.22 2.35
GD S
P
E
G
G 0.92 1.00
H 1.10 1.30
J
H
K
L
N
M
R
J
1.55 1.80
K 0.025 0.102
S
L 0.66 0.79
M 4.55 4.70
N
— 10°
Mechanical Data
· SOT-223 Plastic Case
· Terminal Connections: See Outline Drawing
and Internal Circuit Diagram Above
P
10° 16°
R 0.254 0.356
S
10° 16°
All Dimensions in mm
Maximum Ratings ^{25°C unless otherwise specified}
Characteristic
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Note 1a Continuous
Pulsed
Maximum Power Dissipation
Note 1a
Note 1b
Note 1c
Operating and Storage Temperature Range
Thermal Characteristics
Characteristic
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
Note 1
Symbol
V_DSS
V_GSS
I_D
P_d
T_j, T_STG
Symbol
R_QJA
R_QJC
Value
-30
±20
±7.5
±20
3.0
1.3
1.1
-65 to +150
Value
42
12
Unit
V
V
A
W
°C
Unit
°C/W
°C/W
Notes:
the
1. R_QJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as
solder mounting surface of the drain pins. R_QJC is guaranteed by design while R_QCA is determined by the user’s board design.
1a. With 1 in2 oz 2 oz. copper mounting pad R_{QJA = 42°C/W.}
1b. With 0.0066 in2 oz 2 oz. copper mounting pad R_{QJA = 95°C/W.}
1c. With 0.0123 in² oz 2 oz. copper mounting pad R_{QJA = 110°C/W.}
DS11614 Rev. C-4
1 of 4
DT456P