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DT456P Datasheet, PDF (2/4 Pages) Diodes Incorporated – P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR | |||
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Electrical Characteristics25°C unless otherwise specified
Characteristic
Symbol
Min
Typ
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
-30
â
Zero Gate Voltage Drain Current
Tj = 70°C
IDSS
â
â
Gate-Body Leakage, Forward
IGSSF
â
â
Gate-Body Leakage, Reverse
IGSSR
â
â
ON CHARACTERISTICS (Note 2)
Gate Threshold Voltage
TJ = 125°C
VGS(th)
-1.0
-0.5
-1.5
-1.1
Static Drain-Source On-Resistance
RDS (ON)
â
Tj = 125°C
0.026
0.035
0.041
On-State Drain Current
ID(ON)
-20
-10
â
Forward Transconductance
gFS
â
13
DYNAMIC CHARACTERISTICS
Input Capacitance
CISS
â
1440
Output Capacitance
COSS
â
905
Reverse Transfer Capacitance
CRSS
â
355
SWITCHING CHARACTERISTICS (Note 2)
Turn-On Delay Time
tD(ON)
â
10
Turn-On Rise Time
tr
â
65
Turn-Off Delay Time
tD(OFF)
â
70
Turn-Off Fall Time
tf
â
70
Total Gate Charge
Qg
â
47
Gate-Source Charge
Qgs
â
5.0
Gate-Drain Charge
Qgd
â
12
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
Max Continuous Drain-Source Diode
Forward Current
IS
â
â
Drain-Source Diode Forward Voltage
VSD
â
-0.85
Reverse Recovery Time
trr
â
â
Max
â
-1.0
-10
100
-100
3.0
-2.6
0.03
0.054
0.045
â
â
â
â
â
20
120
130
130
67
â
â
-2.5
-1.2
140
Notes: 2. Pulse Test: Pulse width l 300µs, duty cycle l 2.0%.
Unit
V
µA
nA
nA
Test Condition
VGS = 0V, ID = -250µA
VDS = -24V, VGS = 0V
VGS = 20V, VDS = 0V
VGS = -20V, VDS = 0V
V
VDS = VGS, ID = -250µA
VGS = -10V, ID = -7.5A
W
VGS = -10V, ID = -7.5A
VGS = -4.5V, ID = -6.0A
A
VGS = -10V, VDS = -5.0V
VGS = -4.5V, VDS = -5.0V
m
VDS = -10V, ID = -7.5A
pF
pF
VDS = -15V, VGS = 0V
f = 1.0MHz
pF
ns
ns
VDD = -15V, ID = -7.0A
ns
VGEN = -10V, RGEN = 12W
ns
nC
nC
VDS = -10V. ID = -7.5A.
VGS = -10V
nC
A
V
VGS = 0V, IS = -2.5A (Note 2)
ns
VGS = 0V, IF = -2.5A
dlp/dt = 100A/µs
DS11614 Rev. C-4
2 of 4
DT456P
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