DT455N Datasheet, PDF (3/4 Pages) Diodes Incorporated – N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

40
V_GS = 10V
6.0
5.0
32
4.5
4.0
24
16
8
3.5
3.0
2.5
V_GS = 3.5V
2.0
4.0
4.5
1.5
5.0
6.0
1.0
10
0
0
0.5 1.0 1.5 2.0 2.5 3.0
V_DS, DRAIN-SOURCE VOLTAGE (V)
Fig. 1, On-Region Characteristics
0.5
0
8
16
24
32
40
I_D, DRAIN CURRENT (A)
Fig. 2, On-Resistance vs Gate Voltage and Drain Current
1.5
I_D = 11.5A
V_GB = 10V
1.25
40
V_DS = 10V
30
T_J = -55 C
125 C
25 C
1.0
20
0.75
10
0.5
-50 -25 0
25 50 75 100 125 150
T_j, JUNCTION TEMPERATURE (°C)
Fig. 3, On-Resistance vs Temperature
0
0.8
1.6
2.4
3.2
4
V_GS, GATE TO SOURCE VOLTAGE (V)
Fig. 4, Transfer Characteristics
DS11609 Rev. C-4
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DT455N