DT455N Datasheet, PDF (1/4 Pages) Diodes Incorporated – N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

DT455N
N-CHANNEL ENHANCEMENT MODE
FIELD EFFECT TRANSISTOR
Features
· High Cell Density DMOS Technology
· Low On-State Resistance
· High Power and Current Capability
· Fast Switching Speed
· High Transient Tolerance
A
B
SOT-223
Dim Min Max
A 6.30 6.71
B 2.90 3.10
D
C 6.71 7.29
D 3.30 3.71
CD
E 2.22 2.35
GD S
P
E
G
J
H
G 0.92 1.00
H 1.10 1.30
J 1.55 1.80
R
K 0.025 0.102
K
L
M
N
S
L 0.66 0.79
M 4.55 4.70
N
— 10°
Mechanical Data
P
10° 16°
R 0.254 0.356
· SOT-223 Plastic Case
· Terminal Connections: See Outline Drawing
and Internal Circuit Diagram Above
S
10° 16°
All Dimensions in mm
Maximum Ratings ^{25°C unless otherwise specified}
Characteristic
Symbol
Value
Unit
Drain-Source Voltage
V_DSS
30
V
Gate-Source Voltage
V_GSS
20
V
Drain Current
Note 1a Continuous
Pulsed
I_D
±11.5
±40
A
Maximum Power Dissipation
Note 1a
3.0
Note 1b
P_d
1.3
W
Note 1c
1.1
Operating and Storage Temperature Range
T_j, T_STG
-65 to +150
°C
Thermal Characteristics
Characteristic
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
Note 1
Symbol
R_QJA
R_QJC
Value
42
12
Unit
°C/W
°C/W
Notes:
1. R_QJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as
th111ebca...sWWWolidiittthhher001m..00ino10₂u26no36tziiinnn2g_{22osoozuzz.rcf22aocoopezzp..eoccrfootmphppepoeeudrrnrmtamininooguuppnninattiisndn.ggRRppQQaaJJddACR=Ris4QQ2}g_JJ°AAu_Ca_=/=Wr₁₉a_.15n_0°t_C°e_C/e_W/Wd_{. .}by design while R_QCA is determined by the user’s board design.
DS11609 Rev. C-4
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DT455N