DT455N Datasheet, PDF (2/4 Pages) Diodes Incorporated – N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Electrical Characteristics^{25°C unless otherwise specified}
Characteristic
Symbol
Min
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BV_DSS
30
Zero Gate Voltage Drain Current
T_{j =55°C}
IDSS
—
Gate-Body Leakage, Forward
I_GSSF
—
Gate-Body Leakage, Reverse
I_GSSR
—
ON CHARACTERISTICS (Note 2)
Gate Threshold Voltage
T_j = 125°C
V_GS(th)
1.0
0.7
Static Drain-Source On-Resistance
T_j = 125°C R_{DS (ON)}
—
Typ
—
—
—
—
1.5
0.9
0.013
0.019
0.018
On-State Drain Current
I_D(ON)
30
15
—
Forward Transconductance
g_FS
—
26
DYNAMIC CHARACTERISTICS
Input Capacitance
C_ISS
—
1220
Output Capacitance
C_OSS
—
715
Reverse Transfer Capacitance
C_RSS
—
280
SWITCHING CHARACTERISTICS (Note 2)
Turn-On Delay Time
t_D(ON)
—
11
Turn-On Rise Time
t_r
—
16
Turn-Off Delay Time
t_D(OFF)
—
48
Turn-Off Fall Time
t_f
—
40
Total Gate Charge
Q_g
—
46
Gate-Source Charge
Q_gs
—
4.0
Gate-Drain Charge
Q_gd
—
11
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
Max Continuous Drain-Source Diode
Forward Current
I_S
—
—
Drain-Source Diode Forward Voltage
V_SD
—
0.845
Reverse Recovery Time
t_rr
—
—
Max
—
1.0
10
100
-100
3.0
2.2
0.015
0.03
0.02
—
—
—
—
—
20
30
80
70
61
—
—
2.5
1.2
140
Notes: 2. Pulse Test: Pulse width l 300µs, duty cycle l 2.0%.
Unit
V
µA
nA
nA
Test Conditions
V_GS = 0V, I_D = 250µA
V_DS = 24V, V_GS = 0V
V_GS = 20V, V_DS = 0V
V_GS = -20V, V_DS = 0V
V
V_DS = V_GS, I_D = 250µA
V_GS = 10V, I_D = 11.5A
W
V_GS = 10V, I_D = 11.5A
VGS = 4.5V, ID = 10A
A
VGS = 10V, VDS = 5.0V
VGS = 4.5V, VDS = 5.0V
m
V_DS = 10V, I_D = 11.5A
pF
pF
V_DS = 15V, V_GS = 0V
f = 1.0MHz
pF
ns
ns
V_DD = 15V, I_D = 1.0A
ns
V_GEN = 10V, R_GEN = 6.0W
ns
nC
nC
V_DS = 10V. I_D = 11.5A.
V_GS = 10V
nC
A
V
V_GS = 0V, I_S = 2.5A (Note 2)
ns
V_GS = 0V, I_F = 2.5A
dl_p/dt = 100 A/µs
DS11609 Rev. C-4
2 of 4
DT455N