2N5550 Datasheet, PDF (4/6 Pages) ON Semiconductor – mplifier Transistors(NPN Silicon)

2N5550, 2N5551
1.0
0.9
0.8
0.7
0.6
I_C = 1.0 mA
10 mA
30 mA
100 mA
0.5
0.4
0.3
0.2
0.1
0
0.005 0.01
0.02
0.05
0.1
0.2
0.5
1.0
2.0
5.0
10
20
50
I_B, BASE CURRENT (mA)
Figure 2. Collector Saturation Region
10¹
V_CE = 30 V
10⁰
10^−1
T_J = 125°C
I_C = I_CES
10^−2
75°C
10^−3
REVERSE
FORWARD
10^−4
25°C
10^−5
0.4 0.3 0.2 0.1 0 0.1 0.2 0.3 0.4 0.5 0.6
V_BE, BASE−EMITTER VOLTAGE (VOLTS)
Figure 3. Collector Cut−Off Region
1.0
T_J = 25°C
0.8
V_BE(sat) @ I_C/I_B = 10
0.6
0.4
0.2
V_CE(sat) @ I_C/I_B = 10
0
0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 50 100
I_C, COLLECTOR CURRENT (mA)
Figure 4. “On” Voltages
2.5
2.0
T_J = − 55°C to +135°C
1.5
1.0
0.5
q_VC for V_CE(sat)
0
− 0.5
− 1.0
q_VB for V_BE(sat)
− 1.5
− 2.0
− 2.5
0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 50 100
I_C, COLLECTOR CURRENT (mA)
Figure 5. Temperature Coefficients
4